AMD has introduced a new certification standard for DDR5 memory called EXPO Ultra Low Latency, or ULL. This update targets PC gamers who want higher frame rates without buying faster RAM modules. The certification tightens internal memory timings while keeping the base speed and primary latency unchanged. This approach lets manufacturers squeeze extra performance from existing hardware designs.
BIWIN DW100 kit tightens timings for AMD EXPO ULL certification
BIWIN launched the DW100 24GB x2 DDR5-6000 CL28 kit to support this new standard. It is the first memory module to carry AMD's EXPO ULL certification. The kit uses a 10-layer PCB and selected SK hynix memory ICs to achieve its stability. Operating voltages range from 1.35V to 1.45V to support the tighter timings.
Specifications
- Model: DW100 24GB x2
- Speed: DDR5-6000 CL28
- Certification: AMD EXPO Ultra Low Latency
- PCB Layers: 10-layer
- Memory ICs: SK hynix
The core technical change involves reducing secondary timings such as tREFI, tRRDS, and tWRWRSCL. AMD states that certified ULL memory delivers around 4% higher average gaming performance than standard EXPO at the same speed. This gain comes from reduced latency in memory controller commands rather than higher bandwidth.
BIWIN reports specific performance gains in their own benchmarks. The company saw an 8% increase in average FPS and an 11.91% improvement in 1% lows in Counter-Strike 2. They also cited an 18.18% increase in minimum frame rate in Black Myth: Wukong. These tests ran on a Ryzen 5 9600X and RTX 5070 setup.
These benchmarks come from the vendor in a CPU-bound configuration. Independent testing is needed to verify if these gains hold across different GPUs and games. Pricing and availability for the DW100 kit have not been announced yet. Readers should wait for third-party reviews before making a purchase decision.
Source: BIWIN, TweakTown
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